On April 30, 2008, a team at HP Labs announced the development of a switching memristor based on a thin film of titanium dioxide. It has a regime of operation with an approximately linear charge-resistance relationship as long as the time-integral of the current stays within certain bounds. devices are being developed for application in nanoelectronic memories, computer logic, and neuromorphic computer architectures.
Memristor "the fourth fundamental electronic element"(ppt)Memristor "the fourth fundamental electronic element" (report)
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